Low-Temperature Solution-Phase Growth of Silicon and Silicon-Containing Alloy Nanowires
نویسندگان
چکیده
منابع مشابه
Low-Temperature Solution-Phase Growth of Silicon and Silicon- Containing Alloy Nanowires
Supporting Information for: Low-Temperature Solution-Phase Growth of Silicon and SiliconContaining Alloy Nanowires Jianwei Sun , Fan Cui , Christian Kisielowski, Yi Yu, Nikolay Kornienko, and Peidong Yang Department of Chemistry, University of California, Berkeley, CA 94720; Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720; National Center for Electron Micro...
متن کاملLow-Temperature In Situ Large-Strain Plasticity of Silicon Nanowires**
Elastic-plastic and fracture properties are key issues in characterizing materials’ mechanical behavior, and they have been extensively studied for over a century for bulk structured materials. Silicon is one of the most important and representative materials for these studies owing to its extremely important applications. Silicon nanowires (NWs) are one of the most important nanostructures use...
متن کاملGrowth of silicon nanowires in aqueous solution under atmospheric pressure
A new method for growing silicon nanowires was presented. They were grown in an aqueous solution at a temperature of 85 oC under atmospheric pressure by using sodium methylsiliconate as a water‐soluble silicon precursor. The structure, morphology, and composition of the as‐grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and en...
متن کاملSolution-liquid-solid (SLS) growth of silicon nanowires.
Here we report the solution-liquid-solid (SLS) synthesis of silicon (Si) nanowires. Nanowires are grown by trisilane (Si3H8) decomposition in a high boiling solvent, octacosane (C28H58) or squalane (C30H62), in the presence of either Au or Bi nanocrystals. To our knowledge, this is the first report of a colloidal synthetic route carried out in a solvent at atmospheric pressure that provides cry...
متن کاملTemperature control of silicon-germanium alloy epitaxial growth on silicon substrates by infrared transmission
We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55 pm over wide ranges of thickness, composition, and strain condition. The substantial improvement of ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: The Journal of Physical Chemistry C
سال: 2015
ISSN: 1932-7447,1932-7455
DOI: 10.1021/acs.jpcc.5b08289